bulet Present Research Activities:

   
 

We are working on various aspects of Nanoscience and Nantechnology, in the field of semiconductor nanostructures, Carbon Nanotubes and Graphene.

 

 

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Semiconductor Nanostructures:
Semiconductor nanostructures are the most promising structures for studies of various uncommon fundamental properties (starting from electronic to optical properties) as well as fabrication of various nanodevices. The increasing degrees of quantum confinement have allowed to substantially altering the physical properties leading to fundamentally new physics under reasonable external conditions. In general nanostructures are falls in three distinct varieties of categories namely,
(1)  Zero-Dimensional: Quantum dots, Nanocrystals and Nanoparticles
(2)  One-Dimensional: Nanowires, Nanorods, Nanoribbons and Nanobelts
(3)  Two-Dimensional: Thinfilms, Quantum Well

 

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Our group has synthesized various kinds of semiconducting nanostructurs (from nanocrystals to nanowires/nanorods) of various systems in a controlled way. The systems, which we are currently working are Silicon, Zinc Oxide, Germanium, Titanium Oxide etc.. To moderate the certain properties of the semiconducting nanostructures, we do heterostructures with suitable materials. For more details click here.

 

 

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Nanowires and heterostructures based optoelectronic devices:
One of the fascinating areas of application of semiconductor nanostructures has been in the area of optoelectronic devices, with the two most important areas being photodetectors and solar cells.


Our group has explored the enhanced photosensitivity and fast photoresponse properties from various ZnO nanowires heterostructures, which makes it a suitable candidate for the application of the UV-photodetectores.

For more details click here.

 

 

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Dilute Magnetic Semiconductors:
Dilute magnetic semiconductors, where transition metal atoms are introduced into the cationic sites of the semiconducting host lattice, which also taking attention of the researchers because of their potential use in spintronic devices. In these systems carrier spins are used to transport, store and process information in novel ways to increase speed and storage capacity.


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We have developed new kinds of dilute magnetic semiconductors in ZnO and TiO2 systems, which can show high ferromagnetic behavior even at room temperature. For more details click here.

 

 

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Strain engineering in semiconducting Nanocrystals:
It is known that the electronic band-structure of the semiconducting nanocrystals can be modifying by reducing size due to quantum confinement effect. However, strain can also alter the band-structure and hence the optical properties (absorption and emission behavior). Therefore, along with the quantum confinement effect, strain engineering would enable tunable visible light emission and fast-switching light-emitting devices from indirect bandgap materilas.

 

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Our group has synthesized ultrafine and strained nanocrystals of two indirect bandgap materials namely, Silicon and Germanium. Both the systems emit light in visible region (green-red) and color of the emitted light can be tuned by strain engineering in a controlled way. For more details click here.

 

 

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Carbon Nanotubes and Graphene:
Carbon nanotubes and graphene have numerous potential applications as nano-electronic and nanophotonic devices. However, various kinds of defects and impurities in the as-grown and purified or processed carbon nanotubes alter the band structure in different ways, limiting applications of carbon nanotubes as devices. The synthesis of graphene with very few layers of carbon chains is one of challenging tusk, and synthesis contains use of several hazardous chemicals and precursor gases.

 

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We identified several new types of structural defects in the carbon nanotubes and studied the influence of these defects on the optical properties and fluorescence quenching behaviors. For nano-engineering of carbon nanotubes, defects were introduced in a controlled way by low energy ion-irradiation. We also successfully synthesized good quality monolayer grapheme by a safer solvothermal route. For more details click here.

 

 

 

bulet2 Research Facilities:

 

 
  • In our Laboratory/Department:

  •  

    cvd image

     Chemical Vapor Deposition System

     

          sputtering image

    Magnetron Sputtering (DC and RF)

     

    RTA image

          Rapid Thermal Annealer

     

          profilo image

            Thin film Profilometer

     

    UV image

      UV-vis-NIR Spectrophotometer

     

     

  • In CIF, IIT Guwahati:
  •  

    fesem image

            Field Emission SEM

     

          tem image

      Transmission Electron Microscope

     

esr image

Electron Spin Resonance Spectrometer

 

 

tvd image

    Themal Vapor Deposition System

 

      autoclave

Closed Reaction Chamber (autoclave)

 

Ebeam image

  Electron Beam Evaporation Unit

 

      xrd image

          X-Ray Diffractometer

 

ftir image

FourierTransform Infrared Spectrometer

 

 

 

 

Raman image

          Raman Spectrometer

 

      spm image

    Scanning Probe Microscope

 

dsc image

  Differential Scanning Calorimeter

 

 

 

 

 

thermal image

    Thermal Evaporation Unit

 

      ball milling image

              Planetary Ballmill

 

PL image

      Flurescence Spectrometer

 

      cryo image

    Closed Cycle Helium Cryostat

 

optodevice measurement image

Optoelectronic Properties Measurement

System

 

 

 

trpl image

    Time-Resolved PL Spectrometer

 

      vsm image

   Vibrating Sample Magnetometer

 

squid

Superconducting Quantum Interface Device