Soumen Dhara and P. K. Giri,"Ultrafast Photoresponse from Al Doped ZnO Nanowires Network Decorated with Au Nanoparticles", Chem. Phys. Lett. 541, 39 2012.  I.F. 2.34

Soumen Dhara and P. K. Giri,"Ti nanoparticle decorated ZnO nanowire heterostructure: Photocurrent and photoluminescence properties", J. Exp. Nanosci. (published online, July 4, 2012).  I.F. 1.0

Dilip K. Singh, Parameswar K. Iyer, P. K. Giri, "Distinguishing defect induced intermediate frequency modes from combination modes in Raman spectrum of single walled carbon nanotubes" , J. Appl. Phys. 111, 064304 (2012).  I.F. 2.201.

Soumen Dhara and P. K. Giri, "Stable p-type conduction and enhanced photoconductivity from nitrogen-doped ZnO thin films", Thin Solid Films 520, 5000 (2012).  I.F. 2.023

Soumen Dhara and P. K. Giri, "ZnO/anthracene based inorganic/organic nanowires heterostructure: photoluminescence and photoconductivity studies", J. Appl. Phys. 111, 044320 (2012). I.F. 2.201.

P. K. Giri and Soumen Dhara, "Freestanding Ge/GeO2 core–shell nanocrystals with varying sizes and shell thickness: microstructure and photoluminescence studies", J. NanoMater. 2012, 905178 (2012).  I.F. 1.675

Soumen Dhara and P. K. Giri, "On the origin of enhanced photoconduction and photoluminescence from metal nanoparticle decorated ZnO nanowire heterostructures",J. Appl. Phys. 110, 124317 (2011).  I.F. 2.201.

Batakrushna Santara, Bappaditya Pal and P. K. Giri, "Signature of strong ferromagnetism and optical properties of Co doped TiO2 nanoparticles", J. Appl. Phys. 110, 114322 (2011).  I.F. 2.201.

Dilip Singh, P. K. Giri, and Parameswar K. Iyer, "Evidence for defect-enhanced photoluminescence quenching of fluorescein by carbon nanotubes", J. Phys. Chem. C 115, 24067 (2011).  I.F. 4.524

Soumen Dhara and P. K. Giri,"Quick single-step mechanosynthesis of ZnO nanorods and their optical characterization: milling time dependence", Appl. Nanosci. 165 (2011).

Soumen Dhara and P. K. Giri,"Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires", Nanoscale. Res. Lett 6, 504 (2011).    I.F. 2.557

P. K. Giri, S. Bhattacharya, B. Chetia, Satchi Kumari, D. K. Singh, P. K. Iyer, "High yield chemical synthesis of hexagonal ZnO nanoparticles and nanorods with excellent optical properties", J. Nanosci. Nanotechnol. 12, 201 (2012).  I.F. 1.929

Soumen Dhara and P. K. Giri, "Effect of ZnO nanopowder source and growth temperature on shape evolution of ZnO nanostructures", Int. J. Nanosci. 10, 833 (2011).

Soumen Dhara and P. K. Giri, "Size-dependent anisotropic strain and optical properties of strained Si nanocrystals", J. Nanosci. Nanotechnol. 11, 9215 (2011). I.F. 1.929

Bappaditya Pal and P. K. Giri, "Defect mediated magnetic interaction and high Tc ferromagnetism in Co-doped ZnO nanoparticles", J. Nanosci. Nanotechnol. 11, 9167 (2011). I.F. 1.929

Soumen Dhara and P. K. Giri, "Size-dependent visible absorption and fast photoluminescence decay dynamics from freestanding strained silicon nanocrystals", Nanoscale Res. Lett. 6, 320 (2011). I.F. 2.554

Soumen Dhara and P. K. Giri, "Rapid thermal annealing induced enhanced band-edge emission from ZnO nanowires, nanorods and nanoribbons", Funct. Mater. Lett. 4, 25 (2011).  I.F. 2,671

Prasanta J. Goutam, Dilip K. Singh, P. K. Giri and Parameswar K. Iyer, "Enhancing the photo stability of poly-(3-hexylthiophene) by preparing composites with multiwalled carbon nanotubes", J. Phys. Chem. B 115, 919 (2011). I.F. 3.60

Bappaditya Pal and P. K. Giri,"Room temperature ferromagnetism in Co doped ZnO nanoparticles: Milling time dependence and annealing effect", Int. J. Nanosci. 10, 307 (2011).

Soumen Dhara, P. K. Giri, "Shape evolution in one-dimensional ZnO nanostructure grown from ZnO nanopowder source: vapour-liquid-solid vs. vapour-solid growth mechanisms", Int. J. Nanosci. 10, 75 (2011).

R. Chakraborty , Soumen Dhara, P. K. Giri,"Effect of Rapid Thermal Annealing on Microstructure and Optical Properties of ZnO Nanorods", Int J, Nanosci. 10, 65 (2011).

Dilip K. Singh, P. K. Iyer and P. K. Giri,"Defect evolution and structural improvement in low energy ion irradiated carbon nanotubes: Microscopic and spectroscopic studies", Int. J. Nanosci. 10, 49 (2011).

Dilip K. Singh, P. K. Iyer, P. K. Giri, "Improved chemical synthesis of graphene using a safer solvothermal route", Int. J. Nanosci. 10, 39 (2011).

Soumen Dhara, P. K. Giri, "Effect of growth temperature on the catalyst free growth of long Silicon nanowires using radio frequency magnetron sputtering", Int. J. Nanosci. 10, 13 (2011).

Bappaditya Pal and P. K. Giri, "High temperature ferromagnetism and optical properties of Co doped ZnO nanoparticles", J. Appl. Phys. 108, 084322 (2010). I.F. 2.20

Dilip K. Singh, P. K. Iyer and P. K. Giri, "Diameter dependence of oxidative stability in multiwalled carbon nanotubes: Role of defects and effect of vacuum annealing", J. Appl. Phys. 108, 084313 (2010).  I.F. 2.20

Soumen Dhara and P. K. Giri, "Self-catalytic growth of horizontal and straight Si nanowires on Si substrates using a sputter deposition technique", Solid State Comm. 150, 1923 (2010).  I.F. 1.979

Dilip K. Singh, P. K. Iyer and P. K. Giri,"Probing the interlayer interactions and curvature effects in large diameter multi-walled carbon nanotubes through X-ray diffraction, Raman scattering and TEM studies", Diamond Rel. Mater. 19, 1281 (2010). I.F. 1.906

P. K. Giri, Soumen Dhara, Ritun Chakraborty,"Effect of ZnO seed layer on the catalytic growth of vertically aligned ZnO nanorod arrays", Mater. Chem. Phys. 122, 18 (2010). I.F. 2.462

P. K. Giri, Satchi Kumari, D.K. Goswami, "Low energy oxygen implantation induced improved crystallinity and optical properties of surface modified ZnO single crystals", Appl. Surf. Sci. 256, 384 (2009). I.F. 1.895

P. K. Giri, "Strain analysis in freestanding Germanium nanoparticles", J. Phys. D: Appl. Phys. 42, 245402 (2009).   I.F. 2.109 .

P. K. Giri, S. Bhattacharyya, R. Kesavamoorthy, B. K. Panigrahi and K.G.M. Nair, "Intense ultraviolet-blue photoluminescence from SiO2 embedded Ge nanocrystals prepared by different techniques", J. Nanosci. Nanotechnol. 9, 5389 (2009). I.F. 1.929

Dilip K. Singh, P. K. Iyer and P. K. Giri, "Optical signature of structural defects in single walled and multiwalled carbon nanotubes", J. Nanosci. Nanotechnol. 9, 5396 (2009). I.F. 1.929

Satchi Kumari, Dilip K Snigh, and P. K. Giri, "Strain anisotropy in freestanding germanium nanoparticles synthesized by ball milling", J. Nanosci. Nanotechnol. 9, 5231(2009). I.F. 1.929

P. K. Giri, S. Bhattacharyya and Satchi Kumari, Kaustuv Das and S. K. Ray, B. K. Panigrahi and K. G. M. Nair, "Ultraviolet and blue photoluminescence from sputter deposited Ge nanocrystals embedded in SiO2 matrix", J. Appl. Phys. 103, 103534 (2008). I.F. 2.20

P. K. Giri, S. Bhattacharyya, B. Chetia, B. K. Panigrahi, K.G. M. Nair and P. K. Iyer, "Novel low temperature chemical synthesis and characterization of zinc oxide nanostructures", J. Nanosci. Nanotechnol. 8, 4290 (2008). I.F. 1.929

D. K. Singh, P. K. Iyer and P. K. Giri, "Functionalization of Carbon nanotubes and study of its optical and structural properties", Nano Trends 4, 55 (2008).

Prabhakar P. Palni, Satchi Kumari, Neeraj Garg Baruah, Dilip K Singh, P. K. Giri, "Effect of annealing on high quality zinc oxide nanowires synthesized by catalytic vapor-deposition", Nano Trends 3, 1 (2007).

P. K. Giri, S Bhattacharyya, Kaustuv Das, S. K. Roy, R. Kesavamoorthy, B K Panigrahi, and K. G. M. Nair, "A comparative study of the vibrational and luminescence properties of embedded Ge nanocrystals prepared by ion implantation and sputter deposition methods: role of strain and defects", Semicond. Sci. Technol. 22, 1332 (2007).

P. K. Giri, S. Bhattacharyya, Dilip K Singh, R. Kesavamoorthy, B. K. Panigrahi, and K.G. M. Nair, "Correlation between microstructure and optical properties of ZnO nanoparticles synthesized by ball milling", J. Appl. Phys. 102, 093515 (2007). I.F. 2.20

P. K. Giri, P. K. Patel, C. J. Panchal, S. Bhattacharyya, Satchi Kumari, Dilip K. Singh, V. A. Kheraj, N. M. Shah, P. D. Vakil, B. R. Rehani, V. J. Rao, R. R. Desai, D. Lakshminarayana, P. B. Patel, "Studies on zinc oxide nanorods grown by electron beam evaporation technique", Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry 37, 437 (2007).

P. K. Giri, Kaustuv Das, and Samit K. Roy, "Defect contribution to the photoluminescence from embedded germanium nanocrystals prepared by ion implantation and sputter deposition methods", Mater. Res. Soc. Symp. Proc. Vol. 994, F04-04 (2007).

P. K. Giri and Dilip K. Singh, "Possible role of defects in the Visible Photoluminescence from Single Walled and Multiwalled Carbon Nanotubes", Mater. Res. Soc. Symp. Proc. Vol. 1018, EE07-03 (2007).

P. K. Giri, R. Kesavamoorthy, B. K. Panigrahi, and K.G.M. Nair, "Studies on the formation of Si nanocrystals in SiO2 by Ge ion implantation", Nucl. Instrum. Method. Phys. Res. B 244, 56 (2006).

P. K. Giri, R. Kesavamoorthy, S. Bhattacharya, B. K. Panigrahi, and K.G.M. Nair, "Simultaneoud formation of Si and Ge nanocrystals in SiO2 by one step ion-implantation", Mater. Sci. Engg. B 128, 201 (2006).

P. K. Giri, R. Kesavamoorthy, B. K. Panigrahi and K.G.M. Nair, "Surface acoustic phonon modes of Ge nanocrystals embedded in SiO2", Solid State Commun. 136, 36 (2005).

P. K. Giri, R. Kesavamoorthy, B. K. Panigrahi and K.G.M. Nair, "Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2", Solid State Commun. 133, 229 (2005).

P. K. Giri ,"Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon", Semicond. Sci. Technol. 20, 638 (2005).

P. K. Giri,"Studies on the surface swelling of ion irradiated silicon: Role of defects", Mater. Sci. Engg. B 121, 238 (2005).

P. K. Giri, R. Kesavamoorthy, B. K. Panigrahi, and K.G.M. Nair, "Radiative versus nonradiative decay processes in Germanium nanocrystals probed by time-resolved photoluminescence spectroscopy", Proc. Mat. Res. Soc. Symp. Vo. 864, p.E4.36.1 (2005).

P. K. Giri, "Photoluminescnce studies of interstitial clusters and extended defects in ion-implanted silicon", Physica B 340-342, 734 (2003).

P. K. Giri, "Electrical signature for configurational bistability of self-interstitial clusters in ion-damaged silicon". Physica B 340-342, 729 (2003).

P. K. Giri and V. Raineri, G. Franzo, and E. Rimini , "Mechanism of Swelling in low-energy ion-implanted silicon", Phys. Rev. B 65, 012110 (2001).

P. K. Giri, S. Coffa, V. and E. Rimini, "Evidence for small interstitial clusters as the origin of photoluminecscence W- band in ion damaged silicon", Appl. Phys. Lett. 78, 291 (2001).

P. K. Giri, S. Tripura Sundari, G. Raghavan, B. K. Panigrahi, P. Magudapathy, K. G. M. Nair, and A. K. Tyagi, "Crystalline to amorphous transition and band structure evolution in ion damaged silicon studied by spectroscopic ellipsometry", J. Appl. Phys. 90, 659 (2001).

P. K. Giri, S. Coffa, V. Raineri, and V. Privitera, G. Galvagno, A. La Ferla, and E. Rimini, "Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon", J. Appl. Phys. 89, 4310 (2001).

P. K. Giri and Y. N. Mohapatra, "Evidence of metastability with athermal ionization from defect clusters in ion- damaged silicon", Phys. Rev. B 62, 16561 (2000).

P. K. Giri and Y. N. Mohapatra, "Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon", Phys. Rev. B 62, 2496 (2000).

A. La Ferla, G. Galvagno, P. K. Giri, G. Franzo, E. Rimini, "Oxidation induced precipitation in Al implanted epitaxial silicon", J. Appl. Phys. 88, 3988 (2000).

P. K. Giri and Y. N. Mohapatra, "Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation",Semicond. Sci. Technol. 15, 985 (2000).

P. K. Giri and Y. N. Mohapatra, "Thermal stability of defet ccomplexes due to high dose MeV Ar-implantation in silicon", Mat. Sci. Engg. B 71, 327 (2000).

P. K. Giri, G. Galvagno, A. La Ferla, E. Rimini, S. Coffa, V. Raineri, "Formation and annealing of defects during high temperature processing of ion implanted epitaxial siliccon,: Role of dopant implants", Mat. Sci. Eng. B 71, 186 (2000).

Y. N. Mohapatra and P. K. Giri, "Sensitivity of electrically active defect spectra to processing conditions in MeV ion implanted silicon", Mat. Res. Soc. Symp. Proc. 568, 223 (1999).

P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra, "Charge redistribution among defects in heavily damaged silicon", Phys. Rev. B 57, 14603 (1998).

P. K. Giri and Y. N. Mohapatra, "Electrical characterization of heavily damaged silicon: Evidence for defect migration and clustering", J. Appl. Phys. 84, 1901 (1998).

P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra, "Characterization of deep level defects in Si irradiated with MeV Ar+ ions using constant capacitance time analyzed transient spectroscopy", Bull. Mater. Sci. 20, 417 (1998).

Y. N. Mohapatra and P. K. Giri, "Charge redistribution and defect relaxation in heavily damaged silicon studied using time analyzed transient spectroscopy", Mat. Res. Soc. Symp. Proc.  510, 349 (1998).

Y. N. Mohapatra and P. K. Giri, "Evidence for defect migration and clustering in MeV heavy ion damaged silicon", Mat. Res. Soc. Symp. Proc.  510, 403 (1998).

P. K. Giri and Y. N. Mohapatra, "Compensating defect in deep buried layers produced by MeV heavy ions in n-silicon".Appl. Phys. Lett. 71, 682 (1997).

P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra, "Electrically active defects in as-implanted deep buried layers in p-type silicon", J. Appl. Phys. 81, 260 (1997).

P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra, "Electrically active defects due to end-of-ion range damage in silicon irradiated with MeV Ar+ ions", Nucl. Instr. & Meth. B 111, 285 (1996).

P. K. Giri and Y. N. Mohapatra, "Nonexponentiality in photoinduced current transients in undoped semi-insulating gallium arsenide", J. Appl. Phys. 78, 262 (1995).